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Fig. 1.
Fig. 1. TEM analysis of GaAs NW grown by MOCVD. (a) Low-resolution TEM image showing NW surface morphology; (b) low-resolution TEM image showing NW tip, with Au nanoparticle at nanowire apex; and (c) high-resolution TEM image showing zinc blende structure of GaAs NW, free of stacking fault, and inset showing FFT image of crystal structure.
Applied Science and Convergence Technology 2018;27:166~168 https://doi.org/10.5757/ASCT.2018.27.6.166
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