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Fig. 3.
Fig. 3. Electrical characterization of passivated and non-passivated GaAs NW-based FET. (a), (c) Output characteristics showing the Ids-Vds behavior of passivated and unpassivated NWs, respectively, for zero gate bias; and (b), (d) transfer characteristics showing Ids-Vbg behavior of passivated and unpassivated FET at various Vds.
Applied Science and Convergence Technology 2018;27:166~168 https://doi.org/10.5757/ASCT.2018.27.6.166
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