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Fig. 2.
Fig. 2. (a) Thickness-dependent SIMS profile for changing measurement of In, Ga, Al, and As in LT-InGaAs-PIL (25) and (b) 2theta-omega scanning for determination of crystalline quality of InGaAs-PIL.
Applied Science and Convergence Technology 2018;27:173~177 https://doi.org/10.5757/ASCT.2018.27.6.173
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