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Fig. 4.
Fig. 4. Radiation characteristics of (a) HT-InGaAs-PIL and LT-InGaAs-PIL (50) using PL spectroscopy and (b) carrier life time measurement of HT-InGaAs-PIL, LT-InGaAs-PIL (50), and LT-InGaAs using pump-probe spectroscopy.
Applied Science and Convergence Technology 2018;27:173~177 https://doi.org/10.5757/ASCT.2018.27.6.173
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