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Electronic, Optical and Electrical Properties of Nickel Oxide Thin Films Grown by RF Magnetron Sputtering
Applied Science and Convergence Technology 2015;24:72-76
Published online May 31, 2015
© 2015 Korean Vacuum Society.

Chanae Parka, Juhwan Kima, Kangil Leea, Suhk Kun Oha, Hee Jae Kanga*, and Nam Seok Parkb

aDepartment of Physics, Chungbuk National University, Cheongju 361-763, Korea
bDepartment of Semiconductor Electroengineering, Chungbuk Health&Science University, Cheongju 363-794, Korea
Correspondence to: Hee Jae Kang
hjkang@cbu.ac.kr
Received April 29, 2015; Revised May 8, 2015; Accepted May 29, 2015.
cc This is an Open Access article distributed under the terms of the Creative Commons Attribution Non-Commercial License (http://creativecommons.org/licenses/by-nc/3.0) which permits unrestricted non-commercial use, distribution, and reproduction in any medium, provided the original work is properly cited.
Abstract
Nickel oxide (NiO) thin films were grown on soda-lime glass substrates by RF magnetron sputtering method at room temperature (RT), and they were post-annealed at the temperatures of 100oC, 200oC, 300oC and 400oC for 30 minutes in vacuum. The electronic structure, optical and electrical properties of NiO thin films were investigated using X-ray photoelectron spectroscopy (XPS), reflection electron energy spectroscopy (REELS), UV-spectrometer and Hall Effect measurements, respectively. XPS results showed that the NiO thin films grown at RT and post annealed at temperatures below 300oC had the NiO phase, but, at 400oC, the nickel metal phase became dominant. The band gaps of NiO thin films post annealed at temperatures below 300oC were about 3.7 eV, but that at 400oC should not be measured clearly because of the dominance of Ni metal phase. The NiO thin films post-annealed at temperatures below 300oC showed p-type conductivity with low electrical resistivity and high optical transmittance of 80% in the visible light region, but that post-annealed at 400oC showed n-type semiconductor properties, and the average transmittance in the visible light region was less than 42%. Our results demonstrate that the post-annealing plays a crucial role in enhancing the electrical and optical properties of NiO thin films.
Keywords : NiO thin film, RF magnetron sputtering, XPS, REELS, Optical properties, Electrical Properties


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