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Behavior of Plasma-doped Graphene upon High Temperature Vacuum Annealing
Appl. Sci. Converg. Technol. 2018;27:100-104
Published online September 30, 2018;  https://doi.org/10.5757/ASCT.2018.27.5.100
© 2018 The Korean Vacuum Society.

Byeong-Joo Lee, Sung-Il Jo, and Goo-Hwan Jeong*

Department of Advanced Materials Science and Engineering, Kangwon National University, Chuncheon, Gangwon-do 24341, Republic of Korea
Correspondence to: E-mail: ghjeong@kangwon.ac.kr
Received July 30, 2018; Revised September 28, 2018; Accepted September 29, 2018.
Abstract
Herein, we present the behavior of plasma-doped graphene upon high-temperature vacuum annealing. An ammonia plasma-treated graphene sample underwent vacuum annealing for 1 h at temperatures ranging from 100 to 500 °C. According to Raman analysis, the structural healing of the plasma-treated sample is more pronounced at elevated annealing temperatures. The crystallite size of the plasma-treated sample increases from 13.87 to 29.15 nm after vacuum annealing. In addition, the doping level by plasma treatment reaches 2.2 × 1012 cm-2 and maintains a value of 1.6 × 1012 cm-2, even after annealing at 500 °C, indicating high doping stability. A relatively large decrease in the pyrrolic bonding components is observed by X-ray photoelectron spectroscopy as compared to other configurations, such as pyridinic and amino bindings, after the annealing. This study indicates that high-vacuum annealing at elevated temperatures provides a method for the structural reorganization of plasma-treated graphene without a subsequent decrease in doping level.
Keywords : Graphene, Plasma doping, Vacuum annealing, Structure healing, Doping stability


September 2018, 27 (5)