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Excitation Intensity- and Temperature-Dependent Photoluminescence Study of InAs/GaAs Sub-monolayer-Quantum Dot
Appl. Sci. Converg. Technol. 2018;27:109-112
Published online September 30, 2018;  https://doi.org/10.5757/ASCT.2018.27.5.109
© 2018 The Korean Vacuum Society.

Minseak Kima,#, Hyun Jun Joa,#, Yeongho Kimb, Seung Hyun Leec, Sang Jun Leeb, Christiana B. Honsbergd, and Jong Su Kima,*

aDepartment of Physics, Yeungnam University, Gyeongsan, Korea
bKorea Research Institute of Standards and Science, Daejeon, Korea
cDepartment of Electrical and Computer Engineering, Ohio State University, Columbus, USA
dSchool of Electrical, Computer and Energy Engineering, Arizona State University, Tempe, USA
Correspondence to: E-mail: jongsukim@ynu.ac.kr
#Contributed equally to this work as first author.
Received July 16, 2018; Revised September 20, 2018; Accepted September 21, 2018.
Abstract
Optical properties of InAs/GaAs submonolayer-quantum dot (SML-QD) have been investigated using excitation intensity (Iex)- and temperature-dependent photoluminescence (PL). At a low temperature (13 K) strong PL was observed at 1.420 eV with a very narrow full-width at half maximum, of 7.09 meV. The results of the Iex dependence show that the PL intensities increase with increasing Iex. The enhancement factors (k) of PL increment as a function of Iex are 3.3 and 1.22 at low and high Iex regime, respectively. The high k value at low Iex, implies that the activation energy of the SML-QDs is low. The calculated activation energy of the SML-QDs from temperature dependence is 30 meV.
Keywords : PL, SML QDs, Photoluminescence, Activation enery


September 2018, 27 (5)