Applied Science and Convergence Technology 2009; 18(3): 208-212
Published online May 1, 2009
Copyright © The Korean Vacuum Society.
Ki-Hong Kim,Jun Hyoung Sim,In-Ho Bae
The optical characterization of self-assembled InAs/AlAs quantum dots(QD) grown by MBE were investigated using photoreflectance spectroscopy. The intensities of the signals of the GaAs buffer and wetting layer(WL) changed with the width of the WL layer. The PR spectrum for the sample, in which QDs layer were etched off at room temperature, indicated that the broadened signal ranging 1.1~1.4 eV was originated from InAs QDs and WL. The intensities of signals of GaAs buffer and the WL changed with the WL width. A red shift of the PR peak of WL are observed when the annealing temperatures range from 450℃ to 750℃, which indicates that the interdiffusion between dots and capping layer is caused by improvement in size uniformity of QDs.
Keywords: InAs/AlAs 양자점,Photoreflectance,Wetting laser,열처리 효과,InAs/AlAs quantum dots,Annealing effect