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Applied Science and Convergence Technology 2010; 19(1): 52-57

Published online January 30, 2010

Copyright © The Korean Vacuum Society.

Ferroelectric, Leakage Current Properties of BiFeO₃/Pb(Zr0.52Ti0.48)O₃ Multilayer Thin Films Prepared by Chemical Solution Deposition

J. O. Cha,J. S. Ahn,K. B. Lee


BiFeO₃/Pb(Zr0.52Ti0.48)O₃(BFO/PZT) multilayer thin films have been prepared on a Pt/Ti/SiO₂/Si(100) substrate by chemical solution deposition. BFO single layer, BFO/PZT bilayer and multilayer thin films were studied for comparison. X-ray diffraction analysis showed that the crystal structure of all films was multi-orientated perovskite phase without amorphous and impurity phase. The leakage current density at 500 ㎸/㎝ was reduced by approximately four and five orders of magnitude by bilayer and multilayer structure films, compared with BFO single layer film. The low leakage current density leads to saturated P-E hysteresis loops of bilayer and multilayer films. In BFO/PZT multlayer film, saturated remanent polarization of 44.3μC/㎠ was obtained at room temperature at 1 ㎑ with the coercive field(2Ec) of 681.4 ㎸/㎝.

Keywords: BiFeO₃ (BFO), PbZrTiO₃ (PZT),박막,누설전류,Chemical solution deposition (CSD),잔류분극,항전계,Thin film,Leakage current,Remanent polarization,Coercive field

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