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Applied Science and Convergence Technology 2010; 19(5): 371-376

Published online September 1, 2010

Copyright © The Korean Vacuum Society.

Effects of Substrate Cleaning on the Properties of GaAs Epilayers Grown on Si(100) Substrate by Molecular Beam Epitaxy

Min Young Cho,Min Su Kim,Jae Young Leem

Abstract

The GaAs epitaxial layers were grown on Si(100) substrates by molecular beam epitaxy(MBE) using the two-step method. The Si(100) substrates were cleaned with three different surface cleaning methods of vacuum heating, As-beam exposure, and Ga-beam deposition at the substrate temperature of 800℃ in the MBE growth chamber. Growth temperature and thickness of the GaAs epitaxial layer were 800℃ and 1 μm, respectively. The surface structure and properties were investigated by reflection high-energy electron diffraction (RHEED), AFM (Atomic force microscope), DXRD (Double crystal x-ray diffraction), PL (Photoluminescence), and PR (Photoreflectance). From RHEED, the surface structure of GaAs epitaxial layer grown on Si(100) substrate with Ga-beam deposition is (2×4). The GaAs epitaxial layer grown on Si(100) substrate with Ga-beam deposition has a high quality.

Keywords: 갈륨비소,표면세척,실리콘,분자선에피택시,GaAs,Si,Surface cleaning,Molecular beam epitaxy

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