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Applied Science and Convergence Technology 2012; 21(5): 264-272

Published online September 1, 2012

Copyright © The Korean Vacuum Society.

A Study on THz Generation and Detection Characteristics of InGaAs Semiconductor Epilayers

D. W. Parka,J. S. Kim,S. K. Noh,Young Bin Ji,T.-I. Jeon


In this paper, we report THz generation and detection characteristics inverstigated by InGaAs semiconductor epilayers, as results of a basic study obtained from the InGaAs-based THz transmitter/receiver (Tx/Rx). High-temperature and low-temperature (LT) grown InGaAs epilayers were prepared by the molecular beam epitaxy technique for the characterization of THz generation and detection, respectively, and the surface emission based on the photo-Dember effect was tried for THz generation. THz wave was generated by irradiation of a Ti:Sapphire fs pulse laser (60 ps/83 MHz), and a LT-GaAs Rx was used for the THz detection. The frequency band shown in the spectral amplitudes Fourier-transformed from the measured current signals was ranging in 0.5∼2 THz, and the signal currents were exponentially increased with the Tx beam power. The THz detection characteristics of LT-InGaAs were investigated by using an Rx with dipole (5/20 μm) antenna, and the cutoff frequency was ∼2 THz.

Keywords: 테라헤르쯔(THz),송신기,수신기,저온성장,인듐갈륨아세나이드(InGaAs),갈륨아세나이드(GaAs),Terahertz,Transmitter,Receiver,Low-temperature growth,Indium gallium arsenide,Gallium arsenide

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