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Research Paper

Applied Science and Convergence Technology 2018; 27(6): 166-168

Published online November 30, 2018


Copyright © The Korean Vacuum Society.

Electrical Properties of Surface-Passivated GaAs Nanowires

Rochelle S. Leea, Tae Kyum Kimb, Sang Won Leeb, Kyu Yeon Chob, Jong Hyun Choib, Mi Yeong Kimb, and Jae Cheol Shina,*

aDepartment of Physics, Yeungnam University, Gyeongsangbuk-do 38541, Republic of Korea, bDaegu Science High School, Daegu, Republic of Korea

Correspondence to:*Corresponding author: E-mail: jcshin@yu.ac.kr

Received: November 20, 2018; Accepted: November 23, 2018


The electrical properties of surface-passivated GaAs nanowires (NWs) were investigated and compared with those of unpassivated NWs. Surface passivation was carried out by chemically etching the native oxide of the GaAs NWs with ammonium polysulfide, (NH4)2Sx, while the native oxide of the unpassivated NWs was etched in hydrochloric acid solution. The GaAs NWs were grown by metal-organic chemical vapor deposition via a Au-catalyzed vapor-liquid-solid growth method. Sulfur-passivated single-GaAs NWs showed 3-fold increase in mobility, indicating that sulfur passivation reduces the presence of surface states, contact resistance, and the Schottky barrier at NW-metal contacts.

Keywords: GaAs nanowires, Sulfur passivation, Metal-organic chemical vaper deposition, Nanowire-based field effect transistor

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