Applied Science and Convergence Technology 2018; 27(6): 166-168
Published online November 30, 2018
Copyright © The Korean Vacuum Society.
Rochelle S. Leea, Tae Kyum Kimb, Sang Won Leeb, Kyu Yeon Chob, Jong Hyun Choib, Mi Yeong Kimb, and Jae Cheol Shina,*
aDepartment of Physics, Yeungnam University, Gyeongsangbuk-do 38541, Republic of Korea, bDaegu Science High School, Daegu, Republic of Korea
Correspondence to:*Corresponding author: E-mail: firstname.lastname@example.org
The electrical properties of surface-passivated GaAs nanowires (NWs) were investigated and compared with those of unpassivated NWs. Surface passivation was carried out by chemically etching the native oxide of the GaAs NWs with ammonium polysulfide, (NH4)2Sx, while the native oxide of the unpassivated NWs was etched in hydrochloric acid solution. The GaAs NWs were grown by metal-organic chemical vapor deposition
Keywords: GaAs nanowires, Sulfur passivation, Metal-organic chemical vaper deposition, Nanowire-based field effect transistor