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Research Paper

Applied Science and Convergence Technology 2018; 27(6): 173-177

Published online November 30, 2018

https://doi.org/10.5757/ASCT.2018.27.6.173

Copyright © The Korean Vacuum Society.

Terahertz Characteristics of InGaAs with Periodic InAlAs Insertion Layers

Dong Woo Parka,†,*, Jin Soo Kima, Young Bin Jib, Seung Jae Ohc, Tae-In Jeond, and Sam Kyu Nohe,†,*

aDivision of Advanced Materials Engineering, Chonbuk National University, Jeonju 54896, Republic of Korea, bGimhae Biomedical Center, Gimhae Industry Promotion and Biomedical Foundation, Gyeongsangnam-do 50969, Republic of Korea, cYUHS-KRIBB Medical Convergence Research Institute, Yonsei University College of Medicine, Seoul 03722, Republic of Korea, dDivision of Electrical and Electronics Engineering, Korea Maritime and Ocean University, Busan 49112, Republic of Korea, eDivision of Physics and Semiconductor Science, Dongguk University, Seoul 04620, Republic of Korea

Correspondence to:*Corresponding author: E-mail: dwpark@etri.re.kr, sknoh@dongguk.edu

Received: November 21, 2018; Revised: December 1, 2018; Accepted: December 3, 2018

Abstract

We presented terahertz (THz) generation and detection characteristics of an InGaAs epilayer with periodic InAlAs insertion layers (InGaAs-PIL). The peak-to-peak current signal (PPCS) from a THz transmitter with the InGaAs-PIL was three times higher than that of a simple InGaAs epilayer. Moreover, the detection properties of a THz receiver with the low-temperature grown (LT) InGaAs-PIL showed more than twenty-five times higher than that of the LT-InGaAs epilayer. The PPCS of the LT-InGaAs-PIL was significantly improved with increasing the periods of the InAlAs insertion layer.

Keywords: Terahertz, Molecular beam epitaxy, Low-temperature growth, Indium gallium arsenide, Multiple quantum well

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