Applied Science and Convergence Technology 2019; 28(1): 9-12
Published online January 31, 2019
Copyright © The Korean Vacuum Society.
Minseak Kima,†, Sang Jo Leea,†, Hyun Jun Joa, Geun-Hyeong Kima, Yeong Ho Kimb, Sang Jun Leeb, Christiana B. Honsbergc, and Jong Su Kima,*
aDepartment of Physics, Yeungnam University, Gyeongsan 38541, Korea, bKorea Research Institute of Standards and Science, Daejeon 34113, Korea, cSchool of Electrical, Computer and Energy Engineering, Arizona State University, Arizona 85287, USA
InAs/GaAs submonolayer quantum dots (SML-QD) were investigated by temperature dependent photoreflectance (PR) spectroscopy. To investigate the optical properties of SML-QD, GaAs and InAs SML-QD related PR spectra were monitored at different temperatures. Two notable signals were observed in the SML-QD and GaAs regions. The PR spectra of SML-QD region were interpreted by the third-derivative functional form method. We observe the oscillatory signal above the GaAs band gap energy (
Keywords: Submonolayer quantum dot, Photoreflectance, InAs/GaAs