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Park C, Kim S, Lee GR, , Chung RBK.  Tin Oxide Field-Effect Transistors Deposited by Thermal Atomic Layer Deposition with H<sub>2</sub>O Reactant.  Applied Science and Convergence Technology 2022;31:145-148.  
https://doi.org/10.5757/ASCT.2022.31.6.145
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