eISSN 2288-6559
E-mail a Link to a Someone Who you'd like to recommend.
E-mail a link to the following content:
Kim SG, Roh TM, Park IY, Lee DW, Yang YS, Koo JG, Kim J.  Highly Reliable Trench Gate MOSFET using Hydrogen Annealing.  Applied Science and Convergence Technology 2002;11:212-217.