High interlayer resistance effects on carrier scattering mechanism in a multilayer rhenium disulfide was explored in this study. The obtained temperature (T) -dependent carrier mobility is systematically analyzed by employing Matthiessen’s rule for Coulomb impurity scattering, phonon scattering, and interlayer resistance scattering. The observed anomalous carrier mobility enhancement when T is higher than 380 K was ascribed to a quick suppression of effective interlayer resistance, promoting consequently a rapid channel migration at a given gate and drain electrostatic bias condition.
In Ho Seong , Jang Jae Lee , Chul Hee Cho , Yeong Seok Lee, Si Jun Kim , and Shin Jae You
ASCT 2021; 30(6): 176-182 more
Kukhyun Jo and Hyo Jung Kim
ASCT 2021; 30(1): 14-20 more