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January, 2024, Vol.33 No 1

In this study, we investigated the effect of O2 plasma on both the structural and electrical characteristics of graphene under remote and reactive ion etching (RIE) plasma treatments. Electrical properties and Raman spectra of the plasma treated graphene reveal p-doping effects with RIE mode, which is identified as the optimal mode for enhancing graphene properties without compromising its bonding network integrity. The study also confirms the partial restoration of the plasma-treated graphene achieved through heat treatment.

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< PreviousApplied Science and Convergence Technology 2024; 33(1): 1~35Next >

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March, 2024, Vol.33 No 2

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Review of Hydrogen Gas Sensors for Future Hydrogen Mobility Infrastructure

Jun-Seo Lee, Jin Woo An, Sukang Bae, and Seoung-Ki Lee

ASCT 2022; 31(4): 79-84

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