In this study, we investigated the effect of O2 plasma on both the structural and electrical characteristics of graphene under remote and reactive ion etching (RIE) plasma treatments. Electrical properties and Raman spectra of the plasma treated graphene reveal p-doping effects with RIE mode, which is identified as the optimal mode for enhancing graphene properties without compromising its bonding network integrity. The study also confirms the partial restoration of the plasma-treated graphene achieved through heat treatment.
Gyeong-Ji Kim, Lina Kim, and Oh Seok Kwon
ASCT 2023; 32(1): 1-6
Bhimanaboina Ramulu and Jae Su Yu
ASCT 2024; 33(3): 53-61
ASCT
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