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< PreviousApplied Science and Convergence Technology 2017; 26(3): 43~54Next >
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Facile Modulation of Electrical Properties on Al doped ZnO by Hydrogen Peroxide Immersion Process at Room Temperature
Hyun-Woo Park , and Kwun-Bum Chung Division of Physics and Semiconductor Science, Dongguk University, Seoul 04620, Korea ASCT 2017; 26(3): 43-46 Keywords : Transparent conducting oxide, Al doped ZnO, Solution immersion treatment, Chemical bonding state, Electronic structure -
Enhanced Photosensitivity in Monolayer MoS2 with PbS Quantum Dots
Sangeun Cho , Yongcheol Jo , Hyeonseok Woo , Jongmin Kim , Jungwon Kwak , Hyungsang Kim , and Hyunsik Im aDivision of Physics & Semiconductor Science, Dongguk University, Seoul 04620, South Korea, bMedical Physics Department, Asan Medical Center, Seoul 05505, South Korea ASCT 2017; 26(3): 47-49 Keywords : Photodetector, Molybdenum disulfide, PbS quantum dot -
Coulomb Interaction Induced Gap in an Al/SiO2/Si:P tunnelling Device
Yongcheol Jo , Jongmin Kim , Sangeun Cho , Hyungsang Kim , and Hyunsik Im Division of Physics and Semiconductor Science, Dongguk University, Seoul, Korea ASCT 2017; 26(3): 50-51 Keywords : Coulomb interaction induced gap, Phosphorus doped silicon, Tunnelling device -
Influence of Quantum well Thickness Fluctuation on Optical Properties of InGaN/GaN Multi Quantum well Structure Grown by PA-MBE
Hyeonseok Woo , Jongmin Kim , Sangeun Cho , Yongcheol Jo , Cheong Hyun Roh , Hyungsang Kim , Cheol-Koo Hahn , and Hyunsik Im aDivision of Physics and Semiconductor Science, Dongguk University, Seoul 04620, Korea, bDisplay Materials & Components Research Center, Korea Electronics Technology Institute, Seongnam 13509, Korea ASCT 2017; 26(3): 52-54 Keywords : InGaN/GaN MQW, MBE, Hetero interface, Critical thickness
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