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November, 2019, Vol.28 No 6

Topography image of graphene field effect transistor (FET) in contact with titanium (Ti) electrodes on an SiO2 / Si substrate. Inset : The schematic diagram of water gating by a platinum bar for graphene FET with Ti electrodes. Y. J. Yu reported the conditions of water-gated carrier density accumulation on graphene.2019; 28(6): 226-228

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< PreviousApplied Science and Convergence Technology 2019; 28(6): 179~233Next >

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March, 2022, Vol.31 No 2

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