High interlayer resistance effects on carrier scattering mechanism in a multilayer rhenium disulfide was explored in this study. The obtained temperature (T) -dependent carrier mobility is systematically analyzed by employing Matthiessen’s rule for Coulomb impurity scattering, phonon scattering, and interlayer resistance scattering. The observed anomalous carrier mobility enhancement when T is higher than 380 K was ascribed to a quick suppression of effective interlayer resistance, promoting consequently a rapid channel migration at a given gate and drain electrostatic bias condition.
Sophia Nazir and Oh Seok Kwon
ASCT 2022; 31(2): 40-45
Siyun Noh, Sangmoon Han, Jaehyeok Shin, Jinseong Lee, Ilgyu Choi, Hye Min Oh, Mee-Yi Ryu, and Jin Soo Kim
ASCT 2022; 31(2): 51-55