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July, 2022, Vol.31 No 4

High interlayer resistance effects on carrier scattering mechanism in a multilayer rhenium disulfide was explored in this study. The obtained temperature (T) -dependent carrier mobility is systematically analyzed by employing Matthiessen’s rule for Coulomb impurity scattering, phonon scattering, and interlayer resistance scattering. The observed anomalous carrier mobility enhancement when T is higher than 380 K was ascribed to a quick suppression of effective interlayer resistance, promoting consequently a rapid channel migration at a given gate and drain electrostatic bias condition.

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< PreviousApplied Science and Convergence Technology 2022; 31(4): 79~102Next >

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May, 2024, Vol.33 No 3

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