Fig. 2. Cross-sectional SEM images of the evolution of GaN epitaxy grown (a) at 1040°C and (b) at 950°C under growth pressure of 500 torr during 20 min and 60 min. The facet of GaN epilayer evolves to (0001) plane at high growth temperature of 1040°C. Otherwise, at low growth temperature of 950°C, the {112̄2} facets of GaN are remained by vertical growth rate enhancement.

Applied Science and Convergence Technology 2017;26:79~85 https://doi.org/10.5757/ASCT.2017.26.4.79

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