ASCT로고
eISSN 2288-6559
Fig. 3.
Fig. 3. The growth rate and relative ratio of lateral and vertical growth rate of AlGaN (a) with various growth pressures and (b) with various V/III ratio under growth pressure of 30 torr. Inset in (a) illustrates AlGaN epitaxial layer on triangular GaN stripe. V and L mean vertical growth rate and lateral growth rate, respectively.
Applied Science and Convergence Technology 2017;26:79~85 https://doi.org/10.5757/ASCT.2017.26.4.79
© Appl. Sci. Converg. Technol.

© The Korean Vacuum Society. All Rights Reserved. / Powered by INFOrang Co., Ltd