Fig. 3. The growth rate and relative ratio of lateral and vertical growth rate of AlGaN (a) with various growth pressures and (b) with various V/III ratio under growth pressure of 30 torr. Inset in (a) illustrates AlGaN epitaxial layer on triangular GaN stripe. V and L mean vertical growth rate and lateral growth rate, respectively.

Applied Science and Convergence Technology 2017;26:79~85 https://doi.org/10.5757/ASCT.2017.26.4.79

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