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Fig. 5.
Fig. 5. Etch thickness measurement of Cr (with Si, SiO2, and Si3N4 as references) for different etch conditions, including ALE conditions. (a) Etch depth as a function of Cl+ ion energy (acceleration grid voltage) when the materials were exposed for 20 min. (b) Etch per cycle when the materials were exposed only to Cl+ ions during the desorption step, without the adsorption step, and the etch depth after 100 cycles. The acceleration grid voltage was fixed at +10 V. (c) Etch thickness as a function of O radical adsorption time per cycle while maintaining the desorption with +10 V, Cl+ ions for 10 s/cycle. (d) Etch thickness as a function of Cl+ ion exposure time per cycle after O radical adsorption for 10 s/cycle. Reproduced with permission from [28], Copyright 2018, IOP Publishing.
Applied Science and Convergence Technology 2020;29:41~49 https://doi.org/10.5757/ASCT.2020.29.3.041
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