Fig. 1. (a) Etch rates of SiO₂ and (b) etch selectivities of SiO₂ over poly-Si as a function of O₂ flow rates obtained in the C₄F₈, C₇F₁₄, and C₇F₈ plasmas.

Applied Science and Convergence Technology 2021;30:102~106 https://doi.org/10.5757/ASCT.2021.30.4.102

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