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Fig. 1.
Fig. 1.
(a) Etch rates of SiO
2
and (b) etch selectivities of SiO
2
over poly-Si as a function of O
2
flow rates obtained in the C
4
F
8
, C
7
F
14
, and C
7
F
8
plasmas.
Applied Science and Convergence Technology 2021;30:102~106
https://doi.org/10.5757/ASCT.2021.30.4.102
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