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Fig. 1.
Fig. 1. (a) Etch rates of SiO2 and (b) etch selectivities of SiO2 over poly-Si as a function of O2 flow rates obtained in the C4F8, C7F14, and C7F8 plasmas.
Applied Science and Convergence Technology 2021;30:102~106 https://doi.org/10.5757/ASCT.2021.30.4.102
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