eISSN 2288-6559
Fig. 1.
Fig. 1. (a) Etch rates of SiO2 and (b) etch selectivities of SiO2 over poly-Si as a function of O2 flow rates obtained in the C4F8, C7F14, and C7F8 plasmas.
Applied Science and Convergence Technology 2021;30:102~106
© Appl. Sci. Converg. Technol.

Copyright © The Korean Vacuum Society. All Rights Reserved. / Powered by INFOrang Co., Ltd