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Fig. 4.
Fig. 4. (a) Etching profile of the SiO2 over poly-Si mask and (b) etch rate and selectivity of SiO2/Si etching at different distances from the nipple and for three different power levels.
Applied Science and Convergence Technology 2021;30:176~182 https://doi.org/10.5757/ASCT.2021.30.6.176
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