Fig. 6. (a) Etching profile of SiO₂ over poly-Si mask and (b) etch rate and selectivity of SiO₂/Si at different distances from the nipple and at three different pressure levels.

Applied Science and Convergence Technology 2021;30:176~182 https://doi.org/10.5757/ASCT.2021.30.6.176

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