eISSN 2288-6559
Fig. 6.
Fig. 6. (a) Etching profile of SiO2 over poly-Si mask and (b) etch rate and selectivity of SiO2/Si at different distances from the nipple and at three different pressure levels.
Applied Science and Convergence Technology 2021;30:176~182
© Appl. Sci. Converg. Technol.

© The Korean Vacuum Society. All Rights Reserved. / Powered by INFOrang Co., Ltd