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Fig. 1.
Fig. 1. (a) The semipolar (11-22) GaN-based LEDs and its fabrication process: (b) indium tin oxide (ITO) thin film deposition, (c) dry-etching process to form a mesa structure, (d) p-type electrode, and (e) n-type electrode deposition.
Applied Science and Convergence Technology 2022;31:56~59 https://doi.org/10.5757/ASCT.2022.31.2.56
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