Fig. 2. Optical microscopic (a, b) and atomic force microscopic images (c, d) of the conventional semipolar (11-22) GaN-LED and hexagonal pattern epitaxial lateral overgrowth (HPELO) GaN-LED, respectively. The hexagons dotted with white lines exhibit the SiO₂ hexagonal pattern located underneath the thin film for growing the HPELO-GaN film.

Applied Science and Convergence Technology 2022;31:56~59 https://doi.org/10.5757/ASCT.2022.31.2.56

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