Summary of liquid precursors in low-temperature CVD graphene growth.
No. | Synthesis method | Growth temp (°C) | Carbon source | Catalyst/Substrate | Graphene type | Ref. |
---|---|---|---|---|---|---|
1 | Oxygen-free APCVD |
400 | Benzene or pyridine | Cu interconnects | Multilayer | [35] |
2 | Direct CVD | 350, 450 | Methanol, propylene | TiO2 | Monolayer or double layer | [32] |
3 | CVD | 464 | Ethanol | SiO2/Si, Ni catalyst | Multilayer | [30] |
4 | APCVD | 300 | Pyridine | Cu foil | N-doped graphene | [31] |
5 | PECVD | RT | 1,2-dichlorobenzene (and other aromatic precursors) | Ni, Cu | Graphene nanostripes | [33] |
6 | Cold wall PECVD |
100 | Benzene | Ni catalyst on SiO2/Si | N-doped graphene | [36] |
7 | Cold wall CVD | 400 | Benzene | Ni catalyst on SiO2/Si | Large area bilayer graphene | [34] |
8 | CVD | 500 | Benzene | Cu foil | Monolayer | [29] |
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