Summary of solid precursors in low-temperature CVD graphene growth.
No. | Synthesis method | Growth temp (°C) | Carbon source | Substrate/Catalyst | Graphene type | Ref. |
---|---|---|---|---|---|---|
1 | CVD | 400 | 3’,6’-dibromo-1,1’:2’,1”-terphenyl | Au/mica | Armchair graphene | [38] |
2 | PECVD | 500 | 1,2,3,4-tetraphenylnaphthalene | Al2O3/PI | Four layers | [47] |
3 | CVD | 500 | Perylenetetracarboxylic dianyhydride | SiO2/Si | GNRs | [39] |
4 | 2Z-CVD | 250-500 | 4 |
SiO2/Si | GNRs | [37] |
5 | CVD | 350-400 | 3,9-dibromoperylene and 3,10-dibromoperylene | Fused silica | Armchair graphene nanoribbon | [41] |
6 | AP CVD | 300 | Chitosan | Cu foil | N-doped graphene QDs | [45] |
7 | CVD | 400 | Polystyrene spheres | Cu nanocap array | Cu/Graphene double | [43] |
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