Summary of gaseous precursors in low-temperature CVD graphene growth.
No. | Synthesis method | Growth temp (°C) | Carbon source | Substrate/Catalyst | Graphene type | Ref. |
---|---|---|---|---|---|---|
1 | PECVD | 400-550 | Methane | Glass and FTO | vertically oriented (3D) graphene nanostructures | [49] |
2 | PECVD | 500 | Acetylene | SiO2/Si wafers, Ni/Cu catalysts | Few to monolayer | [61] |
3 | ICP-CVD | 450 | Acetylene | Ni/SiO2 | Multilayer | [62] |
4 | CVD | 150, 400 | Methane | Eagle glass, polyethylene terephthalate, and Ti catalyst | Micrometer scale monolayer | [54] |
5 | Plasma assisted thermal CVD | 100 | Methane | Ti buffered PET and polydimethylsiloxane (PDMS) substrate | Monolayer | [56] |
6 | Microwave plasma CVD | 300 | Methane and CO2 | Quartz, glass | Large area, few-layer | [59] |
7 | PECVD | 500 | Methane | VO2 | Vertically erected nanowalls | [57] |
8 | PECVD | 350 | Methane, acetylene | NiO nanosheets | Vertical graphene nanosheets | [55] |
9 | Microwave plasma CVD | 125 | Methane and CO2 | N-type Si | Large area graphene | [70] |
10 | Forced convection CVD | <400 | Methane | Cu foil | Monolayer | [58] |
11 | Very high frequency- Hot wire cell PECVD | 275 | Methane | Ag thin film on a corning glass substrate | Flakes | [71] |
12 | ICP-CVD | 300 | Methane | SiO2/Si Cu film catalyst | Bilayer | [72] |
13 | CVD | 450 | Acetylene | SiO2/Si Ni/Au catalyst | Few layer | [63] |
14 | CVD | 350-500 | Acetylene | Porous Si | Graphene carbon nanocomposites | [65] |
15 | Microwave assisted CVD | <300 | Methane | Si wafer | Vertically aligned graphene | [50] |
16 | Cold wall CVD | 450 | Acetylene | Ni-Au catalysts on SiO2/Si wafers | Few layer curved graphene films | [64] |
17 | Hot wire CVD | 450 | Methane | W nanoparticles coated c-Si and quartz | Large area graphene nanoplatelets | [60] |
18 | PECVD | 450 | Ethylene | Ni catalyst on Al/Si | Vertical graphene nanosheets | [67] |
19 | PECVD | 400 | Methane | Carbon fibers | Vertical graphene | [51] |
20 | PECVD | 50 | Methane | SiO2 | N-graphene nanowalls | [73] |
21 | cold-wall ICPCVD | 450 | Acetylene | Ni/Au catalyst on SiO2/Si | monolayer | [66] |
22 | PECVD | 100 | Methane | Electroplated Cu thin film on Cu/Ti/Silicon nitride/polyimide | Bilayer | [53] |
23 | PECVD | 500 | Acetylene | Ni alloy catalyst with 1wt% Au and 1wt% Cu on SiO2/Si wafers | Monolayer | [69] |
24 | PECVD | 160 | Methane | Cu ink deposited on PI | Monolayer, bilayer | [52] |
25 | CVD | 400-550 | Ethylene | Ni2C/Ni(100) | Monolayer | [68] |
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