ASCT로고
eISSN 2288-6559
Table. 1.

Applied etching parameters and measured results

Gas (sccm) Sidewall angle (∘) Etching depth (nm) ICP/Bias power (W) Pressure (mT)
Ar/Cl2 = 0:30 50 105 900/100 5
Ar/Cl2 = 10:30 60 189
Ar/Cl2 = 20:20 70 162
Ar/Cl2 = 30:10 70 128
Ar/BCl3 = 10:30 80 161 900/100 5
Ar/BCl3 = 20:20 79 238
HBr/Ar/BCl3 = 5:20:20 89 242 900/100 5
Applied Science and Convergence Technology 2022;31:113~115 https://doi.org/10.5757/ASCT.2022.31.5.113
© Appl. Sci. Converg. Technol.

© The Korean Vacuum Society. All Rights Reserved. / Powered by INFOrang Co., Ltd