ASCT로고
eISSN 2288-6559
Table. 1.

Summary of the growth parameters of 10 wt.% ITO and Sn by RF sputtering.

Parameters ITO target Sn target
RF power 100 W 30 W
Target-to-substrate distance 68 mm 75 mm
Growth rate 28.3 nm/min. 0.5 nm/pass
Substrate temperature 260 °C -
Base pressure ≤ 6.0 × 10−6 Torr ≤ 6.0 × 10−6 Torr
Working pressure 10 mTorr 10 mTorr
Applied Science and Convergence Technology 2022;31:156~160 https://doi.org/10.5757/ASCT.2022.31.6.156
© Appl. Sci. Converg. Technol.

© The Korean Vacuum Society. All Rights Reserved. / Powered by INFOrang Co., Ltd