Fig. 3. Characteristics of the fabricated GFET. (a) SEM image of GFET (S: source, D: drain); the red mark indicates the graphene channel (width: 50 µm, height: 80 µm). (b) Change in output curve of GFET by varying the gate voltage. (c) Changes in I_DS-V_DS after surface treatment. (d) 2D structural images of PDI-diacid and graphene. (e) Schematic diagram of amide bonding between PDI-diacid and antibodies.

Applied Science and Convergence Technology 2023;32:30~33 https://doi.org/10.5757/ASCT.2023.32.1.30

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