Fig. 2. Conductance through the QPC was measured as a function of 1D gate voltage for various QD gate voltages. The plunger gate voltage was fixed at −0.05 V. The same voltage Vup = Vdown = Vc was applied to the upper and lower QD gates. (a) The inner diameter of the side-coupled QD was 300 nm. Vc was varied in 15 steps from −0.69 to −0.9 V. A small conductance bump (grey arrow) in the transition region evolved into a plateau (blue arrow) as the 1D gate voltage changed. (b) The inner diameter of the side-coupled QD was 600 nm. Vc was varied in 15 steps from −0.42 to −0.7 V. (c) The charging energy of the 600 nm QD was measured. The charging energies was estimated to be around 0.3–0.5 meV.
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