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Fig. 2.
Fig. 2. (a) Cross-sectional view for the fabricated 1T′ ReS2 transistor. (b) Representative Raman spectrum of ReS2 multilayers. (c) Device image (bottom panel) and thickness profile along the white line (top panel) confirmed by AFM. (d) Output and (e) transfer characteristic curves of ReS2 multilayers under a high vacuum condition (<10−6 Torr).
Applied Science and Convergence Technology 2023;32:41~44
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