Fig. 2. (a) Cross-sectional view for the fabricated 1T′ ReS₂ transistor. (b) Representative Raman spectrum of ReS₂ multilayers. (c) Device image (bottom panel) and thickness profile along the white line (top panel) confirmed by AFM. (d) Output and (e) transfer characteristic curves of ReS₂ multilayers under a high vacuum condition (<10⁻⁶ Torr).

Applied Science and Convergence Technology 2023;32:41~44 https://doi.org/10.5757/ASCT.2023.32.2.41

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