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Table. 1.

Synthesis and etching sequences of MoS2 by PECVD and RIE

No. Step Equipment
1 Mo deposited onto SiO2/Si wafer e-beam evaporator
2 Wafers loaded in the ICP PECVD system PECVD
3 Wafers sulfurized by exposure to an Ar/H2S Plasma PECVD
4 Etch chamber cleaning using Ar/O2 plasma RIE
5 Wafers loaded in the load lock chamber using robot arm RIE
6 Wafers move into the process chamber RIE
7 Gas (reactive gas) injection RIE
8 Plasma power on (plasma etching) RIE
9 Removing the wafers from the process chamber RIE
Applied Science and Convergence Technology 2023;32:106~109 https://doi.org/10.5757/ASCT.2023.32.5.106
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