Applied Science and Convergence Technology

Fig. 2. Characterization of RIE etching process of MoS₂. (a) Raman spectrum and optical microscopic image of pristine MoS₂ before etching. (b) Raman spectra of plasma etched MoS₂ (5-2 L) for RF top-power of 150, 140, 130, 120, 110 W and RF bottom-power of 10 W, respectively. The color of each specimen is given in the inset. (c) XPS spectra of Mo 3d and S 2p for MoS₂ before etching. (d) XPS spectra of Mo 3d and S 2p for MoS₂ after etching. (e) Cross sectional HR-TEM image of MoS₂ before etching. (f) The step height between masked and exposed regions of MoS₂ before etching obtained by AFM. (g) Cross sectional HR-TEM image of MoS₂ after etching. (h) The step height between masked and exposed regions of MoS₂ after etching obtained by AFM. The thickness contour of 4 in. MoS₂ is characterized by ellipsometry mapping with 49 points for MoS₂ (i) before etching and (j) after etching.

Applied Science and Convergence Technology 2023;32:106~109 https://doi.org/10.5757/ASCT.2023.32.5.106