Applied Science and Convergence Technology

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Table. 2.

Table 2

Process condition of ICP-RIE for MoS₂ etching

Property	Units	Condition
Chamber pressure	mTorr	20
Plasma power (top)	W (watt)	150, 100, 70, 60, 50
Plasma power (bottom)	W (watt)	50, 10
Temperature	°C	20-25 (room temperature)

Applied Science and Convergence Technology 2023;32:106~109 https://doi.org/10.5757/ASCT.2023.32.5.106

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