Applied Science and Convergence Technology

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Table. 3.

Table 3

Experiment conditions of plasma etching for MoS₂

Pressure (mTorr)	CF₄ (sccm)	Ar (sccm)	O₂ (sccm)	Process time (s)	Plasma top power (W)	Plasma bottom power (W)
20	10	10	10	3	150	10
					140
					130
					120
					110

Applied Science and Convergence Technology 2023;32:106~109 https://doi.org/10.5757/ASCT.2023.32.5.106

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