Fig. 1. Schematic of SGM characterization leading to partial tip gating (V_tip) on conducting (semiconductor or metal) channels under a dielectric layer, with the evaluation of conductance by two-terminal (V_DS−I_DS) measurement.

Applied Science and Convergence Technology 2024;33:50~52 https://doi.org/10.5757/ASCT.2024.33.2.50

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