Fig. 2(a) Schematic of SGM process for measuring GNR under HSQ mask on SiO
2. (b) SGM images of GNR with different V
tip (−3, −1, 0, 1, and 3 V) exhibiting substantial variations in current, with positions marked by A, B, and C. The dashed lines correspond to the GNR boundary, as confirmed from the topography [
(b)]. (c) Current profiles extracted along the GNR length direction of SGM images with different V
tip (−3, −1, 0, 1, and 3 V) in (b).
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