Fig. 5. Memory characteristics of pre-washed and MeOH-washed CsPbBr₃ QD memories: I–V characteristics of (a) pre-washed and (b) MeOH-washed CsPbBr₃ memories (V_g sweep range of ±1, 2, 3, 4, and 5 V and V_d = −5 V). Endurance properties of (c) pre-washed and (d) MeOH-washed CsPbBr₃ memories. Normalized photo-response curves (excitation at 450 nm and V_d = −1 V) of (e) pre-washed and (f) MeOH-washed CsPbBr₃ memories.

Applied Science and Convergence Technology 2024;33:62~66 https://doi.org/10.5757/ASCT.2024.33.3.62

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