Fig. 3. Off-current measurement and subthreshold I−V curves at 298, 318, 338, and 358 K for (a) SiTe and (b) N-SiTe. (c) Arrhenius plot of SiTe and N-SiTe at different voltages. (d) Calculation of activation energy at applied voltages derived from the Arrhenius plot. (e) Inter-trap distances and total trap densities of SiTe and N-SiTe (f) Schematics of trap states for SiTe and N-SiTe with and without bias.

Applied Science and Convergence Technology 2024;33:100~103 https://doi.org/10.5757/ASCT.2024.33.4.100

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