Fig. 10. (a) Responsivity of a boron-implanted b-Si detector over a wide wave-length range measured at 0 V bias. Dashed line represents one collected electron per a photon. 1/e photon absorption limit for 1.5 μm junction is highlighted. (b) UV responsivity of market leader diffused Si UV photodiodes compared to this work [79], Copyright 2023, ACS Publishing.

Applied Science and Convergence Technology 2024;33:108~116 https://doi.org/10.5757/ASCT.2024.33.5.108

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