Fig. 11. (a) Evolution of film thickness and EDL after 60 s etch using p = 22.5 mTorr, Q(SF₆/HBPO) = 30/4 sccm, P_rf = 500 W, and P_DC = 150 W bias, followed by annealing for 10 min at 400 °C in N₂ (the original thickness was 212 nm). (b) Extracted k-value for the different conditions. The dashed line corresponds to the pristine k-value [90], Copyright 2018, IOP Publishing.

Applied Science and Convergence Technology 2024;33:108~116 https://doi.org/10.5757/ASCT.2024.33.5.108

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