Fig. 7. Thickness of SiO_xF_y passivation layer versus the deposition temperature and the etch rate of the deposited SiO_xF_y layer on an amorphous Si substrate as a function of the substrate temperature. Reproduced with permission from [48], Copyright 2019, IOP Publishing.

Applied Science and Convergence Technology 2024;33:108~116 https://doi.org/10.5757/ASCT.2024.33.5.108

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