Fig. 8. SEM images with cross-sectional views of b-Si surfaces obtained at different SF₆/O₂ gas flow ratios: (a) 20/20, (b) 34/16, (c) 38/12, (d) 40/10, (e) 42/8, and (f) 46/4 sccm/sccm. All these wafers are etched for 5 min at −120 °C [70], Copyright 2016, ACS Publishing.

Applied Science and Convergence Technology 2024;33:108~116 https://doi.org/10.5757/ASCT.2024.33.5.108

© Appl. Sci. Converg. Technol.