Fig. 3. I−V characteristics of MoTe₂/SnSe₂ heterojunction diode. (b) Dark and (c) photoinduced I−V characteristics of the MoTe₂/SnSe₂ heterojunction photodiode on logarithmic and linear scales, respectively, under NIR (1,300, 1,200, 1,050, 940, and 870 nm) and visible (630 and 528 nm) LED illumination. (d) Spectral responsivity as a function of the illumination wavelength. Responsivity values were extracted from photoinduced I−V curves at V = 0 V.

Applied Science and Convergence Technology 2024;33:164~166 https://doi.org/10.5757/ASCT.2024.33.6.164

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